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A1. Transistor
A2. Amplification.
A3. Outward.
A4. Point-contact.
A5. Quality control.
A6. Positive, more positive.
A7. Because the N material on one side of the forward-biased junction is more heavily doped than the P-material.
A8. The P or base section.
A9. 98 percent.
A10. Holes.
A11. The polarity of voltage applied to the PNP transistor is opposite of that applied to the NPN transistor
A12. I B.
A13. The base current loop and the collector current loop.
A14. Amplifier.
A15. Compensation for slight variations in transistor characteristics and changes in transistor conduction because of temperature variations.
A16. The signals are opposite in polarity or 180 degrees out of phase with each other.
A17. The polarity of the source voltage.
A18. Base current bias or fixed bias.
A19. Self-bias.
A20. When it is necessary to prevent amplitude distortion.
A21. The voltage-divider type.
A22. Class A.

A23. Cutoff.
A24. The amount of bias and the amplitude of the input signal.
A25. Class A.
A26. Common emitter (CE), common base (CB), and common collector (CC).
A27. Common emitter.
A28. Base current (I B).
A29. Alpha (
A30. Common base.
A31. IE.
A32. Common collector.


A34. The kind of transistor, the transistor's common applications, and mechanical data.
A35. The number of junctions in the device, which in this case indicates a transistor.
A36. Heat.
A37. The substitution method.
A38. The power must be removed from the circuit.
A39. By the wide space between the collector lead and the other two leads (emitter and base).
A40. Gain and junction resistance.
A41. Normal gain.
A42. A leaking transistor

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