Quantcast Answers doping level of an avalanche effect diode is lower. A5. An external current-limiting resistor. A6. Because Zener diodes are operated in the reverse bias mode. A7. The amount of doping. A8. Negative resistance.">

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ANSWERS TO QUESTIONS Q1. THROUGH Q44.

A1. The minority carriers.
A2. Zener effect and avalanche effect.
A3. Zener effect.
A4. The doping level of an avalanche effect diode is lower.
A5. An external current-limiting resistor.
A6. Because Zener diodes are operated in the reverse bias mode.
A7. The amount of doping.
A8. Negative resistance.
A9. The tunnel diode has a very narrow depletion region.
A10. Minimum.
A11. Variable capacitance.
A12. The depletion region decreases.
A13. Capacitance decreases.
A14. The SCR is primarily used for switching power on or off.
A15. A gate signal.
A16. The forward bias must be reduced below the minimum conduction level.
A17. SCR.
A18. During both alternations.
A19. Forward bias.
A20. Very low.
A21. The cathode.
A22. Very high.
A23. Reverse bias.
A24. 1:1000.
A25. Photovoltaic cell.
A26. One.
A27. Variable resistor.
A28. A voltage gradient.


A29. From base 1 to the emitter.
A30. High input impedance.
A31. Voltage controls conduction.
A32. Gate.
A33. N-channel and P-channel.
A34. N-type material.
A35. Effective cross-sectional area of the channel.
A36. From source to drain.
A37. Source-to-drain resistance increases.
A38. They are 180 degrees out of phase.
A39. The MOSFET has a higher input impedance.
A40. Gate, source, drain, and substrate.
A41. P-type material.
A42. The gate terminal.
A43. The dual-gate MOSFET.
A44. To prevent damage from static electricity.




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