FABRICATION OF IC DEVICES

1-12 Q21. Describe the preparation of a silicon substrate. FABRICATION OF IC DEVICES Fabrication of monolithic ICs is the most complex aspect of microelectronic devices we will discuss. Therefore, in this introductory module, we will try to simplify this process as much as possible. Even though the discussion is very basic, the intent is still to increase your appreciation of the progress in microelectronics. You should, as a result of this discussion, come to realize that advances in manufacturing techniques are so rapid that staying abreast of them is extremely difficult. Monolithic Fabrication. Two types of monolithic fabrication will be discussed. These are the DIFFUSION METHOD and the EPITAXIAL METHOD. DIFFUSION METHOD.—The DIFFUSION process begins with the highly polished silicon wafer being placed in an oven (figure 1-11). The oven contains a concentration impurity made up of impurity atoms which yield the desired electrical characteristics. The concentration of impurity atoms is diffused into the wafer and is controlled by controlling the temperature of the oven and the time that the silicon wafer is allowed to remain in the oven. This is called DOPING. When the wafer has been uniformly doped, the fabrication of semiconductor devices may begin. Several hundred circuits are produced simultaneously on the wafer. Figure 1-11.—Wafers in a diffusion oven. The steps in the fabrication process described here, and illustrated in figure 1-12, would produce an npn, planar-diffused transistor. But, with slight variations, the technique may also be applied to the production of a complete circuit, including diodes, resistors, and capacitors. The steps are performed in the following order: