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Page Title: APPENDIX I GLOSSARY
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APPENDIX I GLOSSARY
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Neets Module 07-Introduction to Solid-State Devices and Power Supplies
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APPENDIX I GLOSSARY

AI-2 CLASS AB AMPLIFIER OPERATION—The amplifier is biased so that collector current is cut off for a portion of the alternation of the input signal. CLASS B AMPLIFIER OPERATION—The amplifier is biased so that collector current is cut off for one-half of the input signal. CLASS C AMPLIFIER OPERATION—The amplifier is biased so that collector current is cut off for more than one-half of the input signal. COLLECTOR—The element in a transistor which collects the current carriers. COMMON BASE—A transistor circuit in which the base electrode is the common element to both input and output circuits. COMMON COLLECTOR—A transistor circuit configuration in which the collector is the common element to the input circuit and to the output circuit. COMMON EMITTER—Circuit configuration in which the emitter is the element common to both the input and the output circuit. CONDUCTION BAND—A partially filled energy band in which electrons can move freely. COVALENT BOND—A type of linkage between atoms. CURRENT REGULATOR—A circuit that provides a constant current output. DEGENERATION—The process whereby a part of the output signal of an amplifying device is returned to its input circuit in such a manner that it tends to cancel part of the input. DEPLETION REGION—The region in a semiconductor where essentially all free electrons and holes have been swept out by the electrostatic field that exists there. DIODE—A two element solid-state device made of either germanium or silicon. It is primarily used as a switching device. DONOR—An impurity that can make a semiconductor material an N-type by donating extra "free" electrons to the conduction band. DONOR IMPURITY—See PENTAVALENT IMPURITY. DOPING—The process of adding impurities to semiconductor crystals to increase the number of free charges that can be moved by an external, applied voltage. Doping produces an N-type or P-type material. DUAL-GATE MOSFET—A two-gate MOSFET in which either gate can control the conductor independently, a fact which makes this MOSFET very versatile. EFFICIENCY—The ratio of output-signal power compared to the total input power. EMITTER—The element in a transistor that emits current carriers (electrons or holes). EXTRINSIC—A semiconductor in which impurities have been added to create certain charge carrier concentrations.

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